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| JMnic Product Specification Silicon PNP Power Transistors 2SA1386 2SA1386A DESCRIPTION With TO-3PN package Complement to type 2SC3519/3519A APPLICATIONS Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL PARAMETER 2SA1386 VCBO Collector-base voltage 2SA1386A 2SA1386 VCEO Collector-emitter voltage 2SA1386A VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25ae Open collector Open base -180 -5 -15 -4 130 150 -55~150 ae ae V A A W Open emitter -180 -160 V CONDITIONS VALUE -160 V UNIT JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SA1386 IC=-25mA ;IB=0 2SA1386A VCEsat Collector-emitter saturation voltage 2SA1386 2SA1386A IEBO hFE Cob fT Emitter cut-off current DC current gain Output capacitance Transition frequency IC=-5A; IB=-0.5A VCB=-160V; IE=0 CONDITIONS 2SA1386 2SA1386A SYMBOL MIN -160 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -180 -2.0 V ICBO Collector cut-off Current -100 VCB=-180V; IE=0 VEB=-5V; IC=0 IC=-5A ; VCE=-4V IE=0 ; VCB=10V;f=1MHz IC=-2A ; VCE=-12V 50 500 40 -100 180 |I A |I A pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-5A;RL=4| IB1=-IB2=-1A VCC=40V 0.30 0.70 0.20 |I |I |I s s s hFE Classifications O 50-100 P 70-140 Y 90-180 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1386 2SA1386A Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 JMnic Product Specification Silicon PNP Power Transistors 2SA1386 2SA1386A GE S HAN INC OND EMIC TOR UC 4 |
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